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參數(shù)資料
| 型號(hào)： | BF485PN |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 350V V(BR)CEO | 100MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對(duì)|互補(bǔ)| 350V五（巴西）總裁| 100mA的一（c）|律師- 74 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BF485PN |
2000 Aug 02
2
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
FEATURES
High voltage (max. 350 V)
Low current (max. 200 mA)
High power dissipation (600 mW)
Two independently working transistors.
APPLICATIONS
Complementary high-voltage configurations
Hook switch in telephone applications.
DESCRIPTION
NPN/PNP transistors in a SOT457 (SC-74) plastic
package.
MARKING CODE
PINNING
TYPE NUMBER
CODE
BF485PN
HS
PIN
DESCRIPTION
1 and 4
5 and 2
6 and 3
emitter TR1; TR2
base TR1; TR2
collector TR1; TR2
handbook, halfpage
1
3
2
4
5
6
Top view
MAM439
1
3
2
4
5
6
TR1
TR2
Fig.1 Simplified outline (SOT457) and symbol
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature range
open emitter
open base
open collector
65
65
350
350
6
100
200
600
+150
150
+150
V
V
V
mA
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
300
mW
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