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參數(shù)資料
| 型號(hào)： | BF485 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN high-voltage transistors |
| 中文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | BF485 |
2000 Aug 02
5
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
handbook, halfpage
IC
(mA)
0
2
(1)
(7)
(10)
(2)
(3)
(4)
(5)
10
150
50
0
100
4
VCE (V)
6
8
MLD397
(9)
(8)
Fig.8
Collector current as a function of
collector-emitter voltage; typical values.
TR2 (PNP).
(1) I
B
=
50 mA.
(2) I
B
=
45 mA.
(3) I
B
=
40 mA.
(4) I
B
=
35 mA.
(5) I
B
=
30 mA.
(6) I
B
=
25 mA.
(7) I
B
=
20 mA.
(8) I
B
=
15 mA.
(9) I
B
=
10 mA.
(10) I
B
=
5 mA.
handbook, halfpage
(mV)
800
0
10
1
MLD398
1
(2)
(3)
IC (mA)
10
10
2
200
400
600
(1)
Fig.9
Base-emitter voltage as a function of
collector current; typical values.
TR2 (PNP)
; V
CE
=
10 V.
(1) T
amb
=
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
handbook, halfpage
VBEsat
(mV)
600
800
400
200
MLD399
10
1
1
(1)
(3)
IC (mA)
10
10
2
(2)
Fig.10 Base-emitter saturation voltage as a
function of collector current.
TR2 (PNP)
; I
C
/I
B
= 10.
(1) T
amb
=
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
handbook, halfpage
3
10
2
10
10
1
MLD400
1
(1)
(2)
(3)
IC (mA)
VCEsat
(mV)
10
10
2
Fig.11 Collector-emitter saturation voltage as a
function of collector current: typical values.
TR2 (PNP)
; I
C
/I
B
= 10.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
55
°
C.
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