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參數(shù)資料
| 型號： | BF485 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN high-voltage transistors |
| 中文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BF485 |
2000 Aug 02
4
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
handbook, halfpage
(mV)
800
0
10
1
MLD393
1
(1)
(2)
(3)
IC (mA)
10
10
2
200
400
600
Fig.4
Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN)
; V
CE
= 10 V.
(1) T
amb
=
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
handbook, halfpage
VBEsat
(mV)
600
800
400
200
MLD394
10
1
1
(1)
(3)
IC (mA)
10
10
2
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current.
TR1 (NPN)
; I
C
/I
B
= 10.
(1) T
amb
=
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
handbook, halfpage
3
10
2
10
10
1
MLD395
1
(1)
IC (mA)
VCEsat
(mV)
10
10
2
(2)
(3)
Fig.6
Collector-emitter saturation voltage as a
function of collector current: typical values.
TR1 (NPN)
; I
C
/I
B
= 10.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
55
°
C.
handbook, halfpage
0
200
100
MLD396
10
1
1
(1)
(2)
IC (mA)
hFE
10
10
2
(3)
Fig.7
DC current gain as a function of collector
current: typical values.
TR2 (PNP)
; V
CE
=
10 V.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
55
°
C.
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