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參數(shù)資料
| 型號： | BF410B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel silicon field-effect transistors |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 36K |
| 代理商： | BF410B |
December 1990
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
V
DS
= 10 V; V
GS
= 0; T
amb
= 25
°
C for BF410A and B
V
DS
= 10 V; I
D
= 5 mA; T
amb
= 25
°
C for BF410C and D
BF410A
C
is
max.
5
g
is
typ.
100
typ.
0.5
max.
0.7
y
fs
min.
2.5
y
fs
min.
y
fs
typ.
3.5
C
os
max.
3
g
os
max.
60
g
os
typ.
35
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
B
C
D
5
5
5 pF
50
μ
S
0.5 pF
0.7 pF
3.5 mS
7.0 mS
5.0 mS
3 pF
120
μ
S
90
μ
S
90
0.5
0.7
4.0
60
0.5
0.7
4.0
6.0
5.0
Feedback capacitance at f = 1 MHz
C
rs
Transfer admittance at f = 1 kHz
V
GS
= 0 instead of I
D
= 5 mA
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
5.5
3
3
80
55
100
70
Noise figure
at optimum source admittance
G
S
= 1 mS;
B
S
= 3 mS; f = 100 MHz
F
typ.
1.5
1.5
1.5
1.5 dB
Fig.2
V
GS
= 0 for BF410A and BF410B;
I
D
= 5 mA for BF410C and BF410D;
f = 1 MHz; T
amb
= 25
°
C.
handbook, halfpage
0
typ
20
0
0.5
1
Crs
(pF)
VDS (V)
4
8
12
16
MDA277
Fig.3 V
DS
10 V; f = 1 kHz; T
amb
= 25
°
C; typical values.
handbook, halfpage
(mA/V)
0
5
ID (mA)
10
15
0
8
6
4
2
MDA278
BF410B
BF410A
BF410C
BF410D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF410C | N-channel silicon field-effect transistors |
| BF410D | N-channel silicon field-effect transistors |
| BF419 | NPN high-voltage transistor |
| BF587 | NPN high-voltage transistors |
| BF585 | NPN high-voltage transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF410C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
| BF410D | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
| BF411 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92 |
| BF412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 130V V(BR)CEO | 50MA I(C) | TO-92 |
| BF413 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92 |
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