- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375400 > BF410A (NXP SEMICONDUCTORS) N-channel silicon field-effect transistors PDF資料下載
參數(shù)資料
| 型號： | BF410A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel silicon field-effect transistors |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 36K |
| 代理商： | BF410A |
December 1990
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF410A to D
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
amb
= 25
°
C
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
amb
= 75
°
C
Storage temperature range
Junction temperature
V
DS
V
DGO
I
D
±
I
G
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
20 V
20 V
30 mA
10 mA
300 mW
150
°
C
From junction to ambient in free air
R
th j-a
=
250 K/W
Gate cut-off current
V
GS
= 0.2 V; V
DS
= 0
Gate-drain breakdown voltage
I
S
= 0;
I
D
= 10
μ
A
Drain current
V
DS
= 10 V; V
GS
= 0
BF410A
B
C
D
10
I
GSS
max.
10
10
10
nA
V
(BR)GDO
min.
20
20
20
20
V
I
DSS
min.
max.
0.7
3.0
2.5
7.0
6
10 mA
18 mA
12
Gate-source cut-off voltage
I
D
= 10
μ
A; V
DS
= 10 V
V
(P)GS
typ.
0.8
1.5
2.2
3 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF410B | N-channel silicon field-effect transistors |
| BF410C | N-channel silicon field-effect transistors |
| BF410D | N-channel silicon field-effect transistors |
| BF419 | NPN high-voltage transistor |
| BF587 | NPN high-voltage transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF410B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
| BF410C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
| BF410D | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
| BF411 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92 |
| BF412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 130V V(BR)CEO | 50MA I(C) | TO-92 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。