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參數(shù)資料
| 型號(hào)： | BF247C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel silicon junction field-effect transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | BF247C |
1996 Jul 29
3
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
Note
1.
Measured under pulse conditions: t
p
= 300
μ
s;
δ ≤
0.02.
DYNAMIC CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
25
10
400
+150
150
UNIT
V
DS
I
G
P
tot
T
stg
T
j
drain-source voltage
gate current
total power dissipation
storage temperature
operating junction temperature
65
V
mA
mW
°
C
°
C
up to T
amb
= 50
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
0.6
TYP.
MAX.
UNIT
V
(BR)GSS
V
GSoff
V
GS
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
gate leakage current
I
G
=
1
μ
A; V
DS
= 0
I
D
= 10 nA; V
DS
= 15 V
I
D
= 200
μ
A; V
DS
= 15 V
14.5
V
V
1.5
3.0
5.5
4.0
7.0
12.0
V
V
V
I
DSS
V
GS
= 0; V
DS
= 15 V; note 1
30
60
110
80
140
250
5
mA
mA
mA
nA
I
GSS
V
GS
=
15 V; V
DS
= 0
SYMBOL
PARAMETER
CONDITIONS
MIN.
8
TYP.
MAX.
UNIT
C
is
C
rs
C
os
y
fs
f
gfs
input capacitance
reverse transfer capacitance
output capacitance
forward transfer admittance
cut-off frequency
I
D
= 10 mA; f = 1 MHz; V
DS
= 15 V
I
D
= 10 mA; f = 1 MHz; V
DS
= 15 V
I
D
= 10 mA; f = 1 MHz; V
DS
= 15 V
I
D
= 10 mA; f = 1 kHz; V
DS
= 15 V
g
fs
= 0.7 of its value at 1 kHz; V
GS
= 0
11
3.5
5
17
450
pF
pF
pF
mS
MHz
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