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參數(shù)資料
| 型號： | BF247C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel silicon junction field-effect transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 37K |
| 代理商： | BF247C |
1996 Jul 29
2
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
FEATURES
Interchangeability of drain and source connections
High I
DSS
range
Frequency up to 450 MHz.
APPLICATIONS
VHF and UHF amplifiers
Mixers
General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
BF246A; BF246B; BF246C
1
2
3
d
g
s
drain
gate
source
BF247A; BF247B; BF247C
1
2
3
d
s
g
drain
source
gate
Fig.1
Simplified outline (TO-92 variant)
and symbol.
handbook, halfpage
1
3
2
MAM257
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
±
25
14.5
UNIT
V
DS
V
GSoff
I
DSS
drain-source voltage
gate-source cut-off voltage
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
total power dissipation
forward transfer admittance
0.6
V
V
I
D
= 10 nA; V
DS
= 15 V
V
DS
= 15 V; V
GS
= 0
30
60
110
8
80
140
250
400
mA
mA
mA
mW
mS
P
tot
y
fs
up to T
amb
= 50
°
C
I
D
= 10 mA; V
DS
= 15 V;
f = 1 kHz
I
D
= 10 mA; V
DS
= 15 V;
f = 1 MHz
C
rs
reverse transfer capacitance
3.5
pF
T
j
operating junction temperature
150
°
C
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