參數(shù)資料
型號(hào)： BF1212R
廠商： NXP Semiconductors N.V.
元件分類(lèi)： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1212R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,;
文件頁(yè)數(shù)： 7/16頁(yè)
文件大?。?/td> 429K
代理商： BF1212R
2003 Nov 14
7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
0
16
8
0
10
50
20
30
40
MLE237
IG1 (
μ
A)
ID
(mA)
Fig.9
Drain current as a function of gate 1 current;
typical values.
V
DS
= 5 V; V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
ID
(mA)
0
1
5
12
4
0
8
2
VGG (V)
3
4
MLE238
Fig.10 Drain current as a function of gate 1 supply
voltage; typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 150 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
(mA)
0
2
(2)
(1)
(3)
(4)
(5)
(6)
(7)
(8)
4
VGG
=
VDS (V)
6
0
16
12
8
4
MLE239
Fig.11 Drain current as a function of gate 1 and
drain supply voltage; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
R
connected to V
GG
;
see Fig.21.
(1) R
G1
= 47 k
.
(2) R
G1
= 56 k
.
(3) R
G1
= 82 k
.
(4) R
G1
= 100 k
.
(5) R
G1
= 120 k
.
(6) R
G1
= 150 k
.
(7) R
G1
= 180 k
.
(8) R
G1
= 220 k
.
handbook, halfpage
ID
(mA)
0
2
(1)
(2)
(3)
(4)
(5)
4
VG2-S (V)
6
12
4
0
8
MLE240
V
DS
= 5 V; T
j
= 25
C.
R
= 150 k
(connected to V
GG
);
see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
(1) V
GG
= 5 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3 V.
相關(guān)PDF資料
PDF描述
BF1212WR N-channel dual-gate MOSFET
BF1214 Dual N-channel dual-gate MOSFET
BF1214 Dual N-channel dual-gate MOSFET
BF1215 Dual N-channel dual-gate MOSFET
BF1216 Dual N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1212R,215 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1212WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1212WR,115 功能描述:射頻MOSFET小信號(hào)晶體管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET
BF1214 T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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