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參數(shù)資料
| 型號： | BF1212R |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1212R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 429K |
| 代理商： | BF1212R |
2003 Nov 14
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R;
BF1212WR
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier
Excellent low frequency noise performance
Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1212, BF1212R and BF1212WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
PINNING
PIN
DESCRIPTION
1
2
3
4
source
drain
gate 2
gate 1
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.1 Simplified outline (SOT143B).
BF1212; marking code:
LGp
handbook, 2 columns
Top view
MSB035
1
2
4
Fig.2 Simplified outline (SOT143R).
BF1212R; marking code:
LKp
handbook, halfpage
Top view
MSB842
2
1
4
3
Fig.3 Simplified outline (SOT343R).
BF1212WR; marking code:
ML
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
28
100
33
1.7
15
1.1
104
6
30
180
43
2.2
30
1.8
V
mA
mW
mS
pF
fF
dB
dB
V
f = 1 MHz
f = 800 MHz
input level for k = 1 % at
40 dB AGC
T
j
junction temperature
150
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1212WR | N-channel dual-gate MOSFET |
| BF1212R | N-channel dual-gate MOSFET |
| BF1212WR | N-channel dual-gate MOSFET |
| BF1214 | Dual N-channel dual-gate MOSFET |
| BF1214 | Dual N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1212R,215 | 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1212WR | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1212WR,115 | 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1214 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1214 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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