參數(shù)資料
型號: BF1208D
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁數(shù): 8/22頁
文件大?。?/td> 253K
代理商: BF1208D
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
8 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
V
DS(A)
= V
DS(B)
= V
sup
; V
G2-S
= 4 V; T
j
= 25
°
C;
R
G1
= 86 k
(connected to ground); see
Figure 3
.
(1) V
DS(B)
= 5 V.
(2) V
DS(B)
= 4.5 V.
(3) V
DS(B)
= 4 V.
(4) V
DS(B)
= 3.5 V.
(5) V
DS(B)
= 3 V.
(6) V
DS(B)
= 2.5 V.
V
DS(A)
= 5 V; V
G1-S(B)
= 0 V; gate1 (AMPA) is open;
T
j
= 25
°
C.
Fig 9.
Amplifier A: drain current as a function of gate2
voltage; typical values
Fig 8.
Amplifier A: drain current of amplifier A as a
function of supply voltage of A and B amplifier;
typical values
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
°
C; see
Figure 33
.
Fig 10. Amplifier A: unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz;
see
Figure 33
.
Fig 11. Amplifier A: gain reduction as a function of
AGC voltage; typical values
V
sup
(V)
0
5
4
2
3
1
001aaa558
8
12
4
16
20
I
D
(mA)
0
001aaa559
V
G2-S
(V)
0
6
4
2
16
8
24
32
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
gain reduction (dB)
0
50
40
20
30
10
001aac195
100
90
110
120
V
unw
(dB
μ
V)
80
V
AGC
(V)
0
4
3
1
2
001aac196
30
20
40
10
0
gain
reduction
(dB)
50
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