參數(shù)資料
型號: BF1208D
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁數(shù): 21/22頁
文件大?。?/td> 253K
代理商: BF1208D
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
21 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
13. Legal information
13.1
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
.
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參數(shù)描述
BF1208D T/R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1208D,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF120F 制造商:Eaton Corporation 功能描述:BF120F RELAY A
BF120H 制造商:Siemens 功能描述:
BF120M 制造商:Siemens 功能描述: