參數(shù)資料
型號： BF1208
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁數(shù)： 5/23頁
文件大?。?/td> 286K
代理商： BF1208
BF1208
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
5 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
(1) I
D(B)
; R
G1
= 120 k
.
(2) I
D(B)
; R
G1
= 150 k
.
(3) I
D(B)
; R
G1
= 180 k
.
(4) I
D(A)
; R
G1
= 180 k
.
(5) I
D(A)
; R
G1
= 150 k
.
(6) I
D(A)
; R
G1
= 120 k
.
Fig 2.
Drain currents of MOSFET A and B as a
function of gate1 supply voltage
V
GG
= 5 V: amplifier A is off; amplifier B is on.
V
GG
= 0 V: amplifier A is on; amplifier B is off.
Fig 3.
Functional diagram
001aaa552
8
12
4
16
20
I
D
(mA)
0
V
GG
(V)
0
5
4
2
3
1
(2)
(5)
(4)
(6)
(3)
(1)
001aac205
R
G1
V
GG
G1B
G2
G1A
DB
S
DA
Table 8.
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 19 mA; unless otherwise specified.
Symbol
Parameter
Conditions
y
fs
forward transfer admittance
T
j
= 25
C
C
iss(G1)
input capacitance at gate1
f = 1 MHz
C
iss(G2)
input capacitance at gate2
f = 1 MHz
C
oss
output capacitance
f = 1 MHz
C
rss
reverse transfer capacitance
f = 1 MHz
G
tr
power gain
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
NF
noise figure
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
Dynamic characteristics for amplifier A
[1]
Min
26
-
-
-
-
Typ
31
2.2
3.0
0.9
20
Max
41
2.7
-
-
-
Unit
mS
pF
pF
pF
fF
32
28
23
-
-
-
36
32
27
3.0
1.3
1.4
40
36
32
-
1.9
2.1
dB
dB
dB
dB
dB
dB
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參數(shù)描述
BF1208 T/R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1208,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF-1208-03SV06-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF-1208-03SV07-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF-1208-03SV-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
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