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參數(shù)資料
| 型號(hào)： | BF1207 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1207<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 9/23頁 |
| 文件大?。?/td> | 270K |
| 代理商： | BF1207 |
BF1207
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
9 of 23
NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C; see
Figure 29
.
Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz; see
Figure 29
.
Fig 9.
Fig 10. Amplifier A: gain reduction as a function of
AGC voltage; typical values
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz; T
amb
= 25
C; see
Figure 29
.
Fig 11. Amplifier A: drain current as a function of gain reduction; typical values
gain reduction (dB)
0
50
40
20
30
10
001aac887
100
90
110
120
V
unw
(dB
μ
V)
80
V
AGC
(V)
0
4
3
1
2
001aac888
30
20
40
10
0
gain
reduction
(dB)
50
gain reduction (dB)
0
50
40
20
30
10
001aac889
I
D
(mA)
8
24
16
32
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1207 T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1208 T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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