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參數(shù)資料
| 型號： | BF1206F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 6/21頁 |
| 文件大?。?/td> | 320K |
| 代理商： | BF1206F |
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
6 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(A)
= 2.8 V; T
j
= 25
C.
Fig 4.
Amplifier A: gate1 current as a function of
gate1 voltage; typical values
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(A)
= 2.8 V; T
j
= 25
C.
Fig 5.
Amplifier A: forward transfer admittance as a
function of drain current; typical values
V
DS(A)
= 2.8 V; V
G2-S
= 2.5 V, T
amb
= 25
C.
V
DS(A)
= 2.8 V; V
G2
= 2.5 V; R
G1(A)
= 270 k
; see
Figure 32
.
Fig 6.
Amplifier A: drain current as a function of
gate1 current; typical values
Fig 7.
Amplifier A: drain current as a function of
gate1 supply voltage (=V
GG
); typical values
V
G1
S
(V)
0
2.5
2.0
1.0
1.5
0.5
001aad898
40
60
20
80
100
I
G1
(
μ
A)
0
(1)
(2)
(3)
(4)
I
D
(mA)
0
16
12
4
8
001aad899
20
10
30
40
Y
fs
(mS)
0
(1)
(2)
(3)
(4)
001aad900
I
G1
(
μ
A)
0
30
20
10
8
4
12
16
I
D
(mA)
0
V
GG
(V)
0
3
2
1
001aad901
2
4
6
I
D
(mA)
0
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1206F,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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