參數(shù)資料
型號(hào)： BF1206F
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁(yè)數(shù)： 4/21頁(yè)
文件大?。?/td> 320K
代理商： BF1206F
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
4 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
7. Static characteristics
[1]
R
G1
connects gate 1 to V
GG
= 2.8 V.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 7.
T
j
= 25
C.
Symbol
Per MOSFET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Parameter
Conditions
Min
Typ
Max Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
amplifier A
amplifier B
V
GS
= V
DS
= 0 V; I
G1-S
= 10 mA
V
GS
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
A
V
G2-S
= 2.5 V; V
DS
= 2.8 V
amplifier A; R
G1
= 270 k
amplifier B; R
G1
= 220 k
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0 V
amplifier A
amplifier B
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0 V;
6
6
6
6
0.5
0.5
0.3
0.35 -
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain cut-off current
[1]
3
3
-
-
6.5
6.5
mA
mA
I
G1-S
gate1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
Table 8.
Common source; T
amb
= 25
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol
Parameter
y
fs
forward transfer admittance
C
iss(G1)
input capacitance at gate1
C
iss(G2)
input capacitance at gate2
C
oss
output capacitance
C
rss
reverse transfer capacitance
G
tr
transducer power gain
Dynamic characteristics for amplifier A
Conditions
T
j
= 25
C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
Min
17
Typ
22
2.4
3.2
1.1
15
Max
32
2.9
-
-
30
Unit
mS
pF
pF
pF
fF
[1]
-
[1]
-
[1]
-
[1]
-
[1]
-
-
-
-
-
-
31
28
23
3.5
1.0
1.1
-
-
-
-
1.6
1.7
dB
dB
dB
dB
dB
dB
NF
noise figure
相關(guān)PDF資料
PDF描述
BF1206 Dual N-channel dual-gate MOSFET
BF1206 Dual N-channel dual-gate MOSFET
BF1207 Dual N-channel dual-gate MOSFET
BF1207 Dual N-channel dual-gate MOSFET
BF1208D Dual N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1206F,115 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1207 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET
BF1207 T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1207,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1208 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*