參數(shù)資料
    型號: BF1205C
    廠商: NXP Semiconductors N.V.
    元件分類: MOSFETs
    英文描述: Dual N-channel dual-gate MOSFET
    封裝: BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
    文件頁數(shù): 7/23頁
    文件大?。?/td> 288K
    代理商: BF1205C
    BF1205C
    All information provided in this document is subject to legal disclaimers.
    NXP B.V. 2011. All rights reserved.
    Product data sheet
    Rev. 3 — 7 September 2011
    7 of 23
    NXP Semiconductors
    BF1205C
    Dual N-channel dual gate MOS-FET
    (1) V
    G2-S
    = 4 V.
    (2) V
    G2-S
    = 3.5 V.
    (3) V
    G2-S
    = 3 V.
    (4) V
    G2-S
    = 2.5 V.
    (5) V
    G2-S
    = 2 V.
    (6) V
    G2-S
    = 1.5 V.
    V
    DS(a)
    = 5 V; V
    G1-S(b)
    = V
    DS(b)
    = 0 V; T
    j
    = 25
    C.
    Fig 6.
    Forward transfer admittance as a function of
    drain current; typical values.
    V
    DS(a)
    = 5 V; V
    G2-S
    = 4 V; V
    DS(b)
    = 5 V; V
    G1-S(b)
    = 0 V;
    T
    j
    = 25
    C.
    Fig 7.
    Drain current as a function of internal G1
    current (current in pin drain (b) if MOS-FET (b)
    is switched off); typical values.
    I
    D
    (mA)
    0
    32
    24
    8
    16
    001aaa556
    20
    10
    30
    40
    y
    fs
    (mS)
    0
    (1)
    (2)
    (3)
    (4)
    (5)
    (6)
    001aaa557
    I
    D
    (b) (
    μ
    A)
    0
    60
    40
    20
    8
    12
    4
    16
    20
    I
    D
    (a)
    (mA)
    0
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