- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378410 > BF1203 (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號： | BF1203 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1203<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,; |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 560K |
| 代理商： | BF1203 |
2001 Apr 25
8
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1203
handbook, halfpage
0
2
4
6
0
20
40
MCD943
VG2-S (V)
IG1
(
μ
A)
4 V
3.5 V
3 V
4.5 V
VGG
=
5 V
Fig.11 Gate 1 current as a function of gate 2
voltage; typical values.
Amplifier a
V
DS
= 5 V; T
j
= 25
C.
R
G1
= 62 k
(connected to V
GG
); see Fig.35.
handbook, halfpage
reduction
(dB)
0
1
2
4
50
10
3VAGC (V)
20
30
40
MCD944
Fig.12 Typical gain reduction as a function of the
AGC voltage; see Fig.35.
Amplifier a
V
= 5 V; V
GG
= 5 V; R
G1
= 62 k
;
f = 50 MHz; T
amb
= 25
C.
handbook, halfpage
Vunw
(dB
μ
V)
0
gain reduction (dB)
10
50
110
90
80
100
20
30
40
MCD945
Fig.13 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.35.
Amplifier a
V
DS
= 5 V; V
= 5 V; R
G1
= 62 k
; f = 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C.
handbook, halfpage
(mA)
0
50
0
4
8
12
16
10
20
30
40
gain reduction (dB)
MCD946
Fig.14 Drain current as a function of gain
reduction; typical values; see Fig.35.
Amplifier a
V
= 5 V; V
GG
= 5 V; R
G1
= 62 k
;
f = 50 MHz; T
amb
= 25
C.
相關PDF資料 |
PDF描述 |
|---|---|
| BF1204 | Dual N-channel dual-gate MOSFET |
| BF1204 | Dual N-channel dual-gate MOSFET |
| BF1205C | Dual N-channel dual-gate MOSFET |
| BF1205C | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1203,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1204 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。