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參數(shù)資料
| 型號： | BF1203 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1203<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,; |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 560K |
| 代理商： | BF1203 |
2001 Apr 25
2
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1203
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTION
The BF1203 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very
good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor is
encapsulated in a SOT363 micro-miniature plastic
package.
PINNING - SOT363
PIN
DESCRIPTION
1
2
3
4
5
6
gate 1 (a)
gate 2
drain (a)
drain (b)
source
gate 1 (b)
handbook, halfpage
MBL254
Top view
1
3
2
4
5
6
AMP
a
AMP
b
d (a)
s
d (b)
g1 (a)
g2
g1 (b)
Fig.1 Simplified outline and symbol.
Marking code: L2-
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specified
V
DS
I
D
y
fs
drain-source voltage
drain current (DC)
forward transfer admittance
23
25
28
30
2.6
1.7
15
1
1.1
105
10
30
35
40
3.1
2.2
1.8
1.8
V
mA
mS
mS
pF
pF
fF
dB
dB
dB
V
dB
V
amp. a: I
D
= 15 mA
amp. b: I
D
= 12 mA
amp. a: I
D
= 15 mA; f = 1 MHz
amp. b: I
D
= 12 mA; f = 1 MHz
f = 1 MHz
amp. a: f = 400 MHz; I
D
= 15 mA
amp. b: f = 800 MHz; I
D
= 12 mA
amp. a: input level for k = 1% at 40 dB AGC 105
amp. b: input level for k = 1% at 40 dB AGC 100
C
ig1-s
input capacitance at gate 1
C
rss
NF
reverse transfer capacitance
noise figure
X
mod
cross-modulation
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1203,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1204 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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