參數(shù)資料
型號: BF1105
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF1105<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁數(shù): 9/15頁
文件大小: 351K
代理商: BF1105
1997 Dec 02
9
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
BF1105
BF1105R
BF1105WR
MGM257
Rgen
50
Ω
50
Ω
R1 =
50
Ω
10 k
Ω
G2
G1
D
S
10 nF
Vi
10 nF
4.7 nF
47
μ
H
4.7 nF
VG2
VDS
Fig.18 Cross-modulation test set-up.
Table 1
Scattering parameters: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 12 mA
Table 2
Noise data: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 12 mA
f
(MHz)
S
11
S
21
S
12
S
22
MAGNITUDE
(ratio)
ANGLE
(deg)
3.8
7.5
14.7
21.7
28.8
35.4
41.8
48.1
54.0
59.9
65.5
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
2.1
4.2
8.3
12.1
16.2
20.0
23.7
27.3
30.9
34.4
37.9
50
100
200
300
400
500
600
700
800
900
1000
0.994
0.991
0.982
0.968
0.956
0.937
0.918
0.897
0.878
0.858
0.840
3.060
3.047
3.004
2.932
2.896
2.815
2.735
2.651
2.575
2.482
2.396
175.4
170.9
162.1
153.4
145.3
137.1
129.2
121.5
114.0
106.5
99.5
0.000
0.002
0.003
0.004
0.006
0.007
0.007
0.008
0.008
0.008
0.008
86.9
86.1
82.7
79.7
77.8
76.7
76.3
76.7
79.7
82.2
88.0
0.985
0.983
0.980
0.976
0.972
0.967
0.961
0.955
0.948
0.941
0.935
f
(MHz)
F
min
(dB)
opt
R
n
(
)
(ratio)
(deg)
800
1.5
0.674
39.7
37.15
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PDF描述
BF1105 N-channel dual-gate MOSFET
BF1105R N-channel dual-gate MOSFET
BF1105WR N-channel dual-gate MOSFET
BF1105R N-channel dual-gate MOSFET
BF1105WR N-channel dual-gate MOSFET
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BF1105R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1105R,215 功能描述:射頻MOSFET小信號晶體管 Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab) RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1105WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
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