參數資料
型號： BF1105
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1105<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;
文件頁數： 4/15頁
文件大?。?/td> 351K
代理商： BF1105
1997 Dec 02
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient in free air
thermal resistance from junction to soldering point
note 1
350
200
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
0.8
MAX.
1.2
16
50
20
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
G2-S (th)
gate 2-source threshold voltage
I
DSX
self-biasing drain current
I
G1-SS
gate 1 cut-off current
I
G2-SS
gate 2 cut-off current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
V
G2-S
= 0; I
D
= 0; I
G1-S
= 10
A
V
G1-S
= V
DS
= 0; I
G2-S
= 10
A
V
G1-S
= 5 V; V
DS
= 5 V; I
D
= 20
A
V
G2-S
= 4 V; V
DS
= 5 V
V
G1-S
= 5 V; V
G2-S
= 0; I
D
= 0
V
G1-S
= V
DS
= 0; V
G2-S
= 4 V
7
7
7
0.3
8
V
V
V
V
mA
nA
nA
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F
G
p
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
2.7
40
2.5
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
25
31
2.2
1.6
1.2
25
1.7
38
mS
pF
pF
pF
fF
dB
dB
f = 800 MHz; Y
S
= Y
S opt
G
S
= 2 mS; B
S
= B
S opt
; G
L
= 0.5 mS;
B
L
= B
L opt
; f = 200 MHz; see Fig.16
G
S
= 3.3 mS; B
S
= B
S opt
; G
L
= 1 mS;
B
L
= B
L opt
; f = 800 MHz; see Fig.17
input level for k = 1% at 0 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; see Fig.18
input level for k = 1% at 40 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; see Fig.18
20
dB
X
mod
cross-modulation
85
dB
V
100
dB
V
相關PDF資料
PDF描述
BF1105 N-channel dual-gate MOSFET
BF1105R N-channel dual-gate MOSFET
BF1105WR N-channel dual-gate MOSFET
BF1105R N-channel dual-gate MOSFET
BF1105WR N-channel dual-gate MOSFET
相關代理商/技術參數
參數描述
BF1105,215 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1105R 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1105R,215 功能描述:射頻MOSFET小信號晶體管 Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab) RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1105WR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs
BF1105WR T/R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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