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參數(shù)資料
| 型號(hào)： | BF1100 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1100<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,; |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 311K |
| 代理商： | BF1100 |
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
FEATURES
Specially designed for use at 9 to 12 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
BF1100 marking code:
%MY
.
handbook, halfpage
4
3
2
1
Top view
MAM124
s,b
d
g1
g2
Fig.2 Simplified outline (SOT143R) and symbol.
BF1100R marking code:
%MZ
.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g1
g2
3
4
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
T
j
y
fs
C
ig1-s
C
rs
F
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
24
28
2.2
25
2
14
30
200
150
33
2.6
35
V
mA
mW
°
C
mS
pF
fF
dB
f = 1 MHz
f = 800 MHz
Rev. 02 - 13 November 2007
2 of 15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1100 | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1100,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1100/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual-Gate MOS-FETs |
| BF1100/WR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual-Gate MOS-FETs |
| BF1100R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual-gate MOS-FETs |
| BF1100R,215 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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