參數(shù)資料
型號: BDY180
英文描述: NPN Silicon Transistors. Diffused MESA
中文描述: NPN硅晶體管。漫射梅薩
文件頁數(shù): 3/4頁
文件大?。?/td> 168K
代理商: BDY180
COMSET SEMICONDUCTORS
3/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
-
-
-
-
-
-
-
2.0
1.2
1.2
-
-
-
45
90
100
V
BE(SAT)
Base-Emitter Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
A
B
C
A
B
C
55
65
90
20
45
82
V
CE
=4 V, I
C
=1 A
15
30
75
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=2 A
-
f
T
Transition Frequency
V
CE
=15 V, I
C
=0.5 A,
f=10 MHz
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
10
-
-
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A,
I
B
=1 A
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
0.3
0.5
μ
s
t
s
+ t
f
Turn-off time
I
C
=5 A,
I
B1
=1 A,
I
B2
=-0.5 A
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
1.5
2.0
μ
s
(*) Pulse Width
300
μ
s, Duty Cycle
2.0%
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BDY181 Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Voltage Rating DC, Vdc:26VDC; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :65V; Peak Energy (10/1000uS):1.2J; Capacitance, Cd:1100pF
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BDY183 Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Voltage Rating DC, Vdc:26VDC; Peak Surge Current (8/20uS), Itm:1000A; Clamping Voltage 8/20us Max :65V; Peak Energy (10/1000uS):6J; Capacitance, Cd:6000pF
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