參數(shù)資料
型號： BDX33BBU
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 23/61頁
文件大?。?/td> 360K
代理商： BDX33BBU
BDX33B BDX33C BDX34B BDX34C
3–219
Motorola Bipolar Power Transistor Device Data
Figure 1. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t)
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(t) = r(t) RθJC
R
θJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
20
1.0
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
dc
5.0 ms
1.0 ms
BDX33B
BDX33C
500
s
100
s
TC = 25°C
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
20
1.0
Figure 2. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
dc
5.0 ms
1.0 ms
BDX34B
BDX34C
500
s
100
s
TC = 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(AMP)
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Fig. 3 is based on
TJ(pk) = 150_C; TC is variable depending on conditions. Se-
cond breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150_C. TJ(pk) may be calculated from the
data in Fig. . At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
10,000
1.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
100
5000
h
FE
,SMALL–SIGNAL
C
URREN
T
GAIN
20
3000
200
500
2000
1000
30
50
300
0.1
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
C,
CAP
ACIT
ANCE
(pF)
200
100
70
50
TJ = 25°C
Cib
Cob
50
0.2
0.5
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
PNP
NPN
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相關代理商/技術參數(shù)
參數(shù)描述
BDX33BG 功能描述:達林頓晶體管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDX33B-S 功能描述:達林頓晶體管 80V 10A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDX33C 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDX33C 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
BDX33CG 功能描述:達林頓晶體管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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