參數(shù)資料
型號(hào): BDP32
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: PNP medium power transistor
中文描述: 3 A, 45 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù): 3/8頁
文件大?。?/td> 44K
代理商: BDP32
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP medium power transistor
BDP32
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
91
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
20
60
MAX.
50
10
50
300
700
1.2
1.5
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
40 V
I
E
= 0; V
CB
=
40 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
0.5 A; V
CE
=
12 V; note 1; see Fig.2
I
C
=
2 A; V
CE
=
1 V; note 1; see Fig.2
I
C
=
500 mA; I
B
=
50 mA; note 1
I
C
=
2 A; I
B
=
200 mA; note 1
I
C
=
500 mA; I
B
=
50 mA; note 1
I
C
=
2 A; I
B
=
200 mA; note 1
V
CE
=
5 V; I
C
=
250 mA; f = 100 MHz
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation
voltage
mV
mV
V
V
MHz
V
BEsat
base-emitter saturation voltage
f
T
transition frequency
相關(guān)PDF資料
PDF描述
BF1107W N-channel single gate MOS-FETs
BF391 NPN HIGH VOLTAGE VIDEO AMPLIFIERS
BF392 MS3122E18-11PF0
BF397 PNP SILICON TRANSISTOR
BF398 PNP SILICON TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDP32T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | SOT-223
BDP391 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANZYSTORY
BDP392 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BDP392 - Tranzystor ma砮j cz阺totliwo禼i du縠j mocy
BDP393 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BDP393 - Tranzystor ma砮j cz阺totliwo禼i du縠j mocy
BDP394 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BDP394 - Tranzystor ma砮j cz阺totliwo禼i du縠j mocy