參數(shù)資料
型號: BDP31
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN medium power transistor
中文描述: 3 A, 45 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/8頁
文件大小: 44K
代理商: BDP31
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
91
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 50 V;
I
E
= 0; V
CB
= 50 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V;
I
C
= 0.5 A; V
CE
= 12 V; note 1; see Fig.2
I
C
= 2 A; V
CE
= 1 V; note 1; see Fig.2
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 250 mA; V
CE
= 5 V; f = 100 MHz
40
20
60
50
10
50
300
700
1.2
1.5
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation
voltage
mV
mV
V
V
MHz
V
BEsat
base-emitter saturation voltage
f
T
transition frequency
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