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參數(shù)資料
| 型號(hào)： | BDP31 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN medium power transistor |
| 中文描述： | 3 A, 45 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | BDP31 |
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
FEATURES
High current (max. 3 A)
Low voltage (max. 45 V).
APPLICATIONS
General purpose medium power applications.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complement: BDP32.
PINNING
PIN
DESCRIPTION
1
base
collector
emitter
2,4
3
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
70
45
6
3
6
0.5
1.35
+150
150
+150
V
V
V
A
A
A
W
°
C
°
C
°
C
T
mb
≤
25
°
C; note 1
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