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參數(shù)資料
| 型號(hào)： | BDE9100G |
| 元件分類： | Analog Temperature Sensor |
| 英文描述： | ANALOG TEMP SENSOR-VOLTAGE, 1.716-1.79V, 3.5Cel, RECTANGULAR, SURFACE MOUNT |
| 封裝： | 2.90 X 2.80 MM, 1.25 MM HEIGHT, SSOP-5 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 259K |
| 代理商： | BDE9100G |
2004 Dec 09
4
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICES
collector-emitter cut-off current
BST60
VBE = 0 V; VCE = 45 V
50
nA
BST61
VBE = 0 V; VCE = 60 V
50
nA
BST62
VBE = 0 V; VCE = 80 V
50
nA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 4 V
50
nA
hFE
DC current gain
IC = 150 mA
1000
IC = 500 mA
2000
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 0.5 mA
1.3
V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C
1.3
V
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 0.5 mA
1.9
V
fT
transition frequency
IC = 500 mA; VCE = 5 V;
f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA
500
ns
toff
turn-off time
700
ns
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