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參數(shù)資料
| 型號： | BDE9100G |
| 元件分類： | Analog Temperature Sensor |
| 英文描述： | ANALOG TEMP SENSOR-VOLTAGE, 1.716-1.79V, 3.5Cel, RECTANGULAR, SURFACE MOUNT |
| 封裝： | 2.90 X 2.80 MM, 1.25 MM HEIGHT, SSOP-5 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 259K |
| 代理商： | BDE9100G |
2004 Dec 09
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BST60
60
V
BST61
80
V
BST62
90
V
VCES
collector-emitter voltage
VBE = 0 V
BST60
45
V
BST61
60
V
BST62
80
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
1
A
ICM
peak collector current
2
A
IB
base current (DC)
100
mA
Ptot
total power dissipation
1.3
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
96
K/W
Rth(j-s)
thermal resistance from junction to soldering point
16
K/W
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