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參數(shù)資料
| 型號： | BD828-10 |
| 英文描述： | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 1.5AI（丙）|至202 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 202K |
| 代理商： | BD828-10 |
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD828-6 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA |
| BD830-10 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202 |
| BD830-6 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202 |
| BD878 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| BD880 | SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20uA RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD828-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-202 |
| BD829 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN power transistors |
| BD829-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-202 |
| BD829-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-202 |
| BD82B65 S LJ4A | 制造商:Intel 功能描述:CHIPSET 82B65 FCBGA942 SLJ4A COMM T&R - Tape and Reel |
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