參數(shù)資料
型號: BD830-10
英文描述: TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
中文描述: 晶體管|晶體管|進步黨| 80V的五(巴西)總裁| 1.5AI(丙)|至202
文件頁數(shù): 1/5頁
文件大?。?/td> 202K
代理商: BD830-10
相關(guān)PDF資料
PDF描述
BD830-6 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
BD878 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
BD880 SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20uA RoHS Compliant: Yes
BDA234P DIODE TVS 6.0V 500W BI-DIR
BDA218P DIODE TVS 33V 500W UNI-DIR
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