參數(shù)資料
型號： BD744A
廠商： Power Innovations International, Inc.
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 進(jìn)步黨硅功率晶體管
文件頁數(shù)： 2/6頁
文件大?。?/td> 133K
代理商： BD744A
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 μs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
BD744/744A
BD744B/744C
-45
-60
-80
-100
V
I
CBO
Collector cut-off
current
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -30 V
V
CE
= -60 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
-0.1
-0.1
mA
I
CEO
Collector cut-off
current
Emitter cut-off
current
mA
I
EBO
V
EB
= -5 V
I
C
= 0
-0.5
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
V
CE
= -4 V
I
B
= -0.5 A
I
B
= -5 A
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
(see Notes 5 and 6)
40
20
5
150
V
CE(sat)
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
(see Notes 5 and 6)
-1
-3
-1
-3
V
V
BE
(see Notes 5 and 6)
V
h
fe
V
CE
= -10 V
I
C
= -1 A
f = 1 kHz
25
|
h
fe
|
V
CE
= -10 V
I
C
= -1 A
f = 1 MHz
5
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
1.4
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
I
C
= -5 A
V
BE(off)
= 4.2 V
I
B(on)
= -0.5 A
R
L
= 6
I
B(off)
= 0.5 A
t
p
= 20 μs, dc
≤
2%
20
120
600
300
ns
ns
ns
ns
相關(guān)PDF資料
PDF描述
BD744B PNP SILICON POWER TRANSISTORS
BD744C PNP SILICON POWER TRANSISTORS
BD750 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 20A I(C) | TO-3
BD750B PC Board Fuse; Fuse Type:Very Fast Acting; Reel Quantity:3000; Series:435
BD751 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 20A I(C) | TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD744A-S 功能描述:兩極晶體管 - BJT 60V 15A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD744B 功能描述:兩極晶體管 - BJT 90W PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD744B-S 功能描述:兩極晶體管 - BJT 80V 15A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD744C 功能描述:兩極晶體管 - BJT 90W PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD744C(PI) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR
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