參數(shù)資料
型號(hào)： BD616LV4017DIG70
廠商： Electronic Theatre Controls, Inc.
元件分類： DRAM
英文描述： Very Low Power/Voltage CMOS SRAM 256K X 16 bit
中文描述： 非常低功率/電壓CMOS SRAM的256 × 16位
文件頁數(shù)： 1/10頁
文件大?。?/td> 265K
代理商： BD616LV4017DIG70
Revision 2.1
Jan. 2004
1
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV4017EC
BS616LV4017EI
R0201-BS616LV4017
POWER DISSIPATION
STANDBY
( I
SPEED
(
ns )
CC
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
55ns :3.0~5.5V
70ns :2.7~5.5V
Vcc=
3.0V
Vcc =
70ns
3.0V
PKG
TYPE
BS616LV4017DC
BS616LV4017EC
BS616LV4017AC
BS616LV4017DI
BS616LV4017EI
BS616LV4017AI
DICE
TSOP2-44
BGA-48-0608
DICE
TSOP2-44
BGA-48-0608
+0
O
C to +70
O
C
2.4V ~ 5.5V
55 /70
5uA
30uA
21mA
53mA
-40
O
C to +85
O
C
2.4V ~ 5.5V
55 /70
10uA
60uA
22mA
55mA
Very Low Power/Voltage CMOS SRAM
256K X 16 bit
Wide Vcc operation voltage : 2.4~5.5V
Very low power consumption :
Vcc = 3.0V C-grade: 26mA (@55ns) operating current
I-grade: 27mA (@55ns) operating current
C-grade: 21mA (@70ns) operating current
I-grade: 22mA (@70ns) operating current
0.45uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 63mA (@55ns) operating current
I-grade: 65mA (@55ns) operating current
C-grade: 53mA (@70ns) operating current
I-grade: 55mA (@70ns) operating current
2.0uA (Typ.) CMOS standby current
High speed access time :
-55 55ns
-70 70ns
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
The BS616LV4017 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV4017 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4017 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
DESCRIPTION
FEATURES
Row
Decoder
Memory Array
2048 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
A9 A8 A7
Data
Input
Buffer
Control
Gnd
Vcc
OE
UB
WE
CE
DQ15
DQ0
A0
A17
A16
A13
A12
A14
A15
A1
A2
16
16
16
16
14
128
2048
BLOCK DIAGRAM
2048
22
A10
A6
A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
.
.
.
.
LB
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
BS616LV4017
A4
BSI
Operating
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin
Vcc=
5.0V
Vcc =
5.0V
70ns
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參數(shù)描述
BD616LV4017DIP55 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BD616LV4017DIP70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit
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BD616LV4017EC-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BD616LV4017ECG55 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit
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