參數(shù)資料
型號: BDV65B
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218
封裝: PLASTIC, CASE 340D-02, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 105K
代理商: BDV65B
1
Motorola Bipolar Power Transistor Device Data
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain
HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built–in Base Emitter Shunt Resistors
— Peak
Base Current
Derate above 25 C
0.5
1.0
20
Adc
W/ C
Total Device Dissipation
Watts
Temperature Range
1.0
0.8
0
0
25
50
100
125
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
D
75
0.4
0.6
0.2
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDV65B/D
DARLINGTONS
10 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80–100–120 VOLTS
125 WATTS
CASE 340D–02
SOT 93, TO–218 TYPE
REV 8
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