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參數(shù)資料
| 型號(hào)： | BD534J |
| 英文描述： | Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 45V的五（巴西）總裁| 8A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | BD534J |
2000 Fairchild Semiconductor International
Rev. E
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD534 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD636 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-220AB |
| BD301 | DIODE TVS 600W 300V BIDIR 5% SMB |
| BD303 | DIODE TVS 600W 350V BIDIR 5% SMB |
| BD415 | Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Current, It av:4A; Holding Current:30mA; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD534K | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD534KTU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD535 | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD5350 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time |
| BD5350FVE | 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |
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