參數(shù)資料
型號： BD534J
英文描述： Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA
中文描述： 晶體管|晶體管|進(jìn)步黨| 45V的五（巴西）總裁| 8A條一（c）| TO - 220AB現(xiàn)有
文件頁數(shù)： 1/4頁
文件大?。?/td> 36K
代理商： BD534J
2000 Fairchild Semiconductor International
Rev. A, February 2000
B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage : BD534
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CBO
Collector Cut-off Current : BD534
* Pulse Test: PW =300
μ
s, duty Cycle =1.5% Pulsed
Parameter
Value
- 45
- 60
- 80
- 45
- 60
- 80
- 5
- 8
- 1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°
C
°
C
: BD536
: BD538
V
CEO
Collector-Emitter Voltage : BD534
: BD536
: BD538
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Base Current
Collector Dissipation (T
C
=25
°
C)
Junction Temperature
Storage Temperature
Test Condition
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= -2 V, I
C
= - 500mA
V
CE
= - 5V, I
C
= - 10mA
Min.
Typ.
Max.
- 100
- 100
- 100
- 100
- 100
- 100
- 1
Units
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
: BD536
: BD538
I
CES
Collector Cut-off Current : BD534
: BD536
: BD538
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain : ALL DEVICE
: BD534/536
: BD538
: BD534/536
: BD538
V
CE
= - 2V, I
C
= - 2A
40
20
15
25
15
h
FE
h
FE
Groups
J
K
: ALL DEVICE
: ALL DEVICE
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
V
CE
= -2V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 6A, I
B
= - 0.6A
V
CE
= - 2V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 500mA
30
15
40
20
75
100
V
CE
(sat)
* Collector-Emitter Saturation Voltage
- 0.8
- 0.8
V
V
V
V
BE
(on)
f
T
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
- 1.5
3
12
MHz
BD534/536/538
Medium Power Linear and Switching
Applications
Low Saturation Voltage
Complement to BD533, BD535 and BD537 respectively
1.Base 2.Collector 3.Emitter
1
TO-220
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD534K 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD534KTU 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD535 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD5350 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time
BD5350FVE 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay
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