參數(shù)資料
型號： BD329
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor(NPN功率晶體管)
中文描述： 3 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁數(shù)： 4/8頁
文件大小： 68K
代理商： BD329
1997 Mar 07
4
Philips Semiconductors
Product specification
NPN power transistor
BD329
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
85
40
50
TYP.
0.6
130
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 32 V
I
E
= 0; V
CB
= 32 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0.5 A; V
CE
= 1 V; see Fig.2
I
C
= 2 A; V
CE
= 1 V; see Fig.2
I
C
= 5 mA; V
CE
= 10 V
I
C
= 2 A; I
B
= 0.2 A
I
C
= 5 mA; V
CE
= 10 V
I
C
= 2 A; V
CE
= 1 V
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 0.5 A;
V
CE
= 1 V
100
10
100
375
0.5
1.2
1.6
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
V
BE
collector-emitter saturation voltage
base-emitter voltage
V
V
V
MHz
f
T
h
h
FE2
transition frequency
DC current gain ratio of the
complementary pairs
-----------
Fig.2 DC current gain; typical values.
V
CE
= 1 V.
handbook, full pagewidth
hFE
0
10
1
100
250
200
150
50
MGD844
1
IC (mA)
10
10
2
10
4
10
3
相關(guān)PDF資料
PDF描述
BD330 PNP power transistor(PNP功率晶體管)
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BD437T Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
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