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參數(shù)資料
| 型號： | BD243C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | BD243C |
BD243B/BD243C
BD244B/BD244C
COMPLEMENTARY SILICON POWER TRANSISTORS
I
STMicroelectronicsPREFERRED
SALESTYPES
DESCRIPTION
The
BD243B
Epitaxial-Base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementaryPNP types are BD244B and
BD244C respectively.
and
BD243C
are
silicon
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BD243B
BD244B
80
80
BD243C
BD244C
100
100
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
V
V
V
A
A
A
W
o
C
o
C
5
6
10
2
65
-65 to 150
150
1
2
3
TO-220
1/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD244B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD244C | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD433 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD434 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD435 | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD243C | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
| BD243C_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors |
| BD243CG | 功能描述:兩極晶體管 - BJT 6A 100V 65W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD243CMC | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-220 |
| BD243C-S | 功能描述:兩極晶體管 - BJT 100V 6A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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