參數(shù)資料
型號： BD177-6
英文描述： DIODE SIDACTOR 77V 200A 2P SMT LF
中文描述： 晶體管|晶體管|叩| 60V的五（巴西）總裁| 3A條一（c）|至126
文件頁數(shù)： 2/3頁
文件大?。?/td> 28K
代理商： BD177-6
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
D
175
D
176
177
178
60
60
5.0
3.0
7.0
30
150
179
180
80
80
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Collector current (Peak value)
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
max.
max.
max.
max.
max.
max.
max.
45
45
V
V
V
A
A
W
°C
–65 to +150
oC
THERMAL RESISTANCE
From junction to case
R
th j–c
4.16
°C/W
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
D
175
D
176
177
178
179
180
Collector cutoff current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 80 V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 1 A; I
B
= 0.1 A
Base-emitter on voltage
I
C
= 1 A; V
CE
= 2 V
D.C. curent gain
I
C
= 150 mA; V
CE
= 2 V**
I
C
= 1 A; V
CE
= 2 V
Transition frequency
I
C
= 250 mA; V
CE
= 10V
I
CBO
I
CBO
I
CBO
max. 100
max.
max.
–
–
–
μA
μA
μA
–
–
100
–
100
I
EBO
max.
1.0
mA
V
CEO(sus)
*
V
CBO
V
EBO
min.
min.
min.
45
45
60
60
5.0
80
80
V
V
V
V
CEsat
*
max.
0.8
V
V
BE(on)
*
max.
1.3
V
h
FE
*
h
FE
*
min.
min.
40
15
f
T
min.
3.0
MHz
**
h
FE
classification
:
–6
min.
max. 100
40
–10
min.
max. 160
63
only BD175, 176
–16
min.
max. 250
100
*Pulse test: pulse duration
≤
300 μs; duty cycle
≤
1.5%.
BD175, BD177, BD179
BD176, BD178, BD180
相關(guān)PDF資料
PDF描述
BD178-10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126
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BD179-6 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
BD180-6 Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:60pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
BD176-10 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF; Holding Current:50mA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD178 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Medium Power Linear and Switching Applications
BD178-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126
BD17810STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD178-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126
BD179 功能描述:兩極晶體管 - BJT NPN Gen Purpose Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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