參數(shù)資料
型號(hào): BD140
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: PNP power transistor(PNP功率晶體管)
中文描述: 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 44K
代理商: BD140
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
THERMAL CHARACTERISTICS
Note
1.
Refer to TO-126 (SOT32) standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
note 1
100
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
100
10
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 125
°
C
I
C
= 0; V
EB
=
5 V
V
CE
=
2 V; (see Fig.2)
I
C
=
5 mA
I
C
=
150 mA
I
C
=
500 mA
I
C
=
150 mA; V
CE
=
2 V;
(see Fig.2)
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
40
63
25
250
DC current gain
BD136-10; BD138-10; BD140-10
BD136-16; BD138-16; BD140-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
63
100
160
160
250
0.5
1
V
CEsat
V
BE
f
T
I
C
=
500 mA; I
B
=
50 mA
I
C
=
500 mA; V
CE
=
2 V
I
C
=
50 mA; V
CE
=
5 V;
f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
V
V
MHz
DC current gain ratio of the
complementary pairs
1.3
1.6
h
h
FE2
-----------
相關(guān)PDF資料
PDF描述
BD136-10 Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Green; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
BD136-16 PNP power transistors
BD136 PNP SILICON TRANSISTORS
BD139-10 NPN power transistors
BD137 NPN power transistors
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