- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369446 > BD140-25 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 PDF資料下載
參數(shù)資料
| 型號： | BD140-25 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 80V的五（巴西）總裁| 1.5AI（丙）|至126 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | BD140-25 |
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM272
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BD136
BD138
BD140
collector-emitter voltage
BD136
BD138
BD140
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
45
60
100
V
V
V
V
CEO
open base
65
65
45
60
80
5
1.5
2
1
8
+150
150
+150
V
V
V
V
A
A
A
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
mb
≤
70
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD140 | PNP power transistor(PNP功率晶體管) |
| BD136-10 | Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Green; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes |
| BD136-16 | PNP power transistors |
| BD136 | PNP SILICON TRANSISTORS |
| BD139-10 | NPN power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD1406 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Medium Power Linear and Switching Applications |
| BD140-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS |
| BD1406S | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD1406STU | 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD140A01BK00275 | 制造商:APEM 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。