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參數(shù)資料
| 型號： | BD131 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 中文描述： | 3 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | BD131 |
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN power transistor
BD131
THERMAL CHARACTERISTICS
Note
1.
Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
note 1
100
6
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0.5 A; V
CE
= 12 V; (see Fig.2)
I
C
= 2 A; V
CE
= 1 V; (see Fig.2)
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 0.5 A; I
B
= 50 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 0.25 A; V
CE
= 5 V; f = 100 MHz;
T
amb
= 25
°
C
40
20
60
50
10
50
300
700
1.2
1.5
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation voltage
mV
mV
V
V
MHz
V
BEsat
base-emitter saturation voltage
f
T
transition frequency
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PDF描述 |
|---|---|
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| BDGLA | QUAD DIFFERENTIAL DRIVERS |
| BDP1A | QUAD DIFFERENTIAL DRIVERS |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BD131/BD132 | 制造商:STMicroelectronics 功能描述:NPN power transistor pair,BD131/BD132 3A |
| BD131_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
| BD1310G-10-T100-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| BD1310G-10-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| BD1310L-10-T100-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
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