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參數(shù)資料
| 型號(hào)： | BD131 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 中文描述： | 3 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 43K |
| 代理商： | BD131 |
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN power transistor
BD131
FEATURES
High current (max. 3 A)
Low voltage (max. 45 V).
APPLICATIONS
General purpose power applications.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD132.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM254
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
70
45
6
3
6
0.5
15
+150
150
+150
V
V
V
A
A
A
W
°
C
°
C
°
C
T
mb
≤
60
°
C
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PDF描述 |
|---|---|
| BD132 | PNP power transistor |
| BDGLA | QUAD DIFFERENTIAL DRIVERS |
| BDP1A | QUAD DIFFERENTIAL DRIVERS |
| BDP1A16NB | QUAD DIFFERENTIAL DRIVERS |
| BDP31 | NPN medium power transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD131/BD132 | 制造商:STMicroelectronics 功能描述:NPN power transistor pair,BD131/BD132 3A |
| BD131_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL POWER TRANSISTORS |
| BD1310G-10-T100-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| BD1310G-10-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| BD1310L-10-T100-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
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