參數(shù)資料
型號: BD01D
英文描述: NPN Silicon 1 Watt Amplifier Transistors
中文描述: NPN硅晶體管放大器1瓦特
文件頁數(shù): 3/4頁
文件大?。?/td> 132K
代理商: BD01D
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BDB01A
BDB01B
BDB01C
BDB01D
20
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
100
μ
s
1.0 ms
1.0 s
TC = 25
°
C
TA = 25
°
C
dc
dc
DUTY CYCLE
10%
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.8
–2.8
1.0
100
10
θ
VB for VBE
0.5
2.0
5.0
20
50
200
–1.2
–1.6
–2.0
–2.4
V
θ
°
500
C
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
80
60
40
20
10
8.0
4.0
TJ = 25
°
C
Cobo
Cibo
6.0
Figure 6. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
200
70
50
30
20
10
7.0
5.0
3.0
2.0
300
200
100
70
50
30
VCE = 2.0 V
TJ = 25
°
C
f
T
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2 k
1.0
I
2.0
5.0
Figure 7. Active Region–Safe Operating Area
500
200
100
50
20
10
10
60 80 100
1 k
45
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