參數資料
型號： BD01D
英文描述： NPN Silicon 1 Watt Amplifier Transistors
中文描述： NPN硅晶體管放大器1瓦特
文件頁數： 1/4頁
文件大小： 132K
代理商： BD01D
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BDB01C
BDB01D
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
80
100
Vdc
Collector–Base Voltage
80
100
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
0.5
Adc
Total Device Dissipation
@ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watt
mW/
°
C
Total Device Dissipation
@ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watt
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(IC = 10 mA, IB = 0)
BDB01C
BDB01D
V(BR)CEO
80
100
—
—
Vdc
Collector Cutoff Current
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
BDB01C
BDB01D
ICBO
—
—
0.01
0.01
Adc
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
IEBO
—
100
nAdc
Order this document
by BDB01C/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
123
COLLECTOR
3
2
BASE
1
EMITTER
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BD020-03-A-J-0350-0300-L-G 制造商:Global Connector Technology (GCT) 功能描述:BOARD-BOARD CONNECTOR HEADER 3WAY 1ROW 制造商:Global Connector Technology (GCT) 功能描述:BOARD-BOARD CONNECTOR HEADER, 3WAY, 1ROW; Series:-; Pitch Spacing:1.27mm; No. of Rows:1; No. of Contacts:3; Gender:Header; Contact Termination:Through Hole Vertical; Contact Plating:Gold; Contact Material:Copper Alloy ;RoHS Compliant: Yes
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