參數(shù)資料
型號(hào): BD01C
英文描述: NPN Silicon 1 Watt Amplifier Transistors
中文描述: NPN硅晶體管放大器1瓦特
文件頁數(shù): 2/4頁
文件大小: 132K
代理商: BD01C
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
Collector–Emitter Saturation Voltage(1)
(IC = 1000 mA, IB = 100 mA)
Collector–Emitter On Voltage(1)
(IC = 1000 mA, VCE = 1.0 V)
DYNAMIC CHARACTERISTICS
hFE
40
25
400
VCE(sat)
0.7
Vdc
VBE(on)
1.2
Vdc
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
fT
50
MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
30
pF
1. Pulse Test: Pulse Width
300 s, Duty Cycle 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
200
100
80
60
40
h
TJ = 125
°
C
25
°
C
–55
°
C
VCE = 1.0 V
300
500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
1.0
0.8
0.6
0.4
0.2
0
0.05
0.1
10
1.0
TJ = 25
°
C
IC = 10 mA
0.2
0.5
2.0
5.0
20
100 mA
250 mA
50
mA
50
500 mA
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
V
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
200
20
TJ = 25
°
C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
5.0
10
50
100
VBE(sat) @ IC/IB = 10
2.0
500
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