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參數(shù)資料
| 型號(hào)： | BCY89 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN general purpose transistors |
| 中文描述： | 30 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-71 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | BCY89 |
1997 Jun 20
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BCY87; BCY88; BCY89
FEATURES
Low current (max. 30 mA)
Low voltage (max. 45 V).
APPLICATIONS
Differential amplifier applications in general industrial
service e.g. instrumentation and control
The BCY87 and BCY88 are intended for use in
pre-stages of differential amplifiers where low offset, low
drift and low noise are of prime importance
The BCY89 is intended for use in second stages of
differential amplifiers, long-tailed pairs and more general
applications.
DESCRIPTION
Matched dual NPN transistors in a TO-71; SOT31 metal
package. Products are divided into 3 types according to
their matching accuracy.
PINNING
Note
1.
All leads insulated from the case.
PIN
(1)
DESCRIPTION
1
2
3
4
5
6
emitter TR1
emitter TR2
collector TR2
basis TR2
basis TR1
collector TR1
Fig.1
Simplified outline (TO-71; SOT31)
and symbol.
handbook, halfpage
MAM351
1
3
5
TR1
TR2
6
2
4
1
3
4
5
6
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
V
CEO
P
tot
h
FE
collector-base voltage
collector-emitter voltage
total power dissipation
DC current gain
BCY87
BCY88
BCY89
DC current gain
transition frequency
open emitter
open base
T
amb
≤
25
°
C
V
CE
= 10 V
I
C
= 5
μ
A
I
C
= 500
μ
A
I
C
= 10 mA
I
C
= 50
μ
A; V
CE
= 10 V
I
C
=
50
μ
A; V
CE
= 10 V; f = 100 MHz
I
C
=
500
μ
A; V
CE
= 10 V; f = 100 MHz
45
40
150
V
V
mW
80
120
100
100
10
50
600
600
450
h
FE
f
T
MHz
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCY89 | NPN SILICON PLANAR DUAL TRANSISTORS |
| BD130 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-3 |
| BD167 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA |
| BD168 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA |
| BD170 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCZ3.81/02/180FSNBKBX | 制造商:Weidmuller 功能描述:Omnimate 3.81mm plug-socket+flange 2w |
| BCZ3.81/02/180LRSNBKBX | 制造商:Weidmuller 功能描述:Omnimate 3.81mm plug-socket+release 2w |
| BCZ3.81/02/180SNBKBX | 制造商:Weidmuller 功能描述:Omnimate 3.81mm 180deg plug-socket 2w |
| BCZ3.81/02/90FSNBKBX | 制造商:Weidmuller 功能描述:Omnimate 3.81mm 90deg plug-socket+F 2w |
| BCZ3.81/02/90SNBKBX | 制造商:Weidmuller 功能描述:Omnimate 3.81mm 90deg plug-socket 2w |
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