參數(shù)資料
型號(hào): BD168
英文描述: Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA
中文描述: 晶體管|晶體管|進(jìn)步黨| 60V的五(巴西)總裁| 1.5AI(丙)|至126
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 27K
代理商: BD168
Continental Device India Limited
Data Sheet
Page 1 of 3
BD166, 168, 170
Complementary BD165, 167, 169
Audio Amplifier and Driver Circuit Applications
PNP PLASTIC POWER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
166
45
45
168
60
60
1.5
20
150
170
80
80
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 0.5 A; I
B
= 0.05 A
D.C. current gain
I
C
= 0.15 A; V
CE
= 2 V
V
CBO
V
CEO
I
C
P
tot
T
j
max.
max.
max.
max.
max.
V
V
A
W
°C
V
CEsat
max.
0.5
V
h
FE
min.
40
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
166
45
45
168
60
60
5.0
170
80
80
V
CBO
V
CEO
V
EBO
max.
max.
max.
V
V
V
BD166, BD168, BD170
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
ALL DIMENSIONS IN MM
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
相關(guān)PDF資料
PDF描述
BD170 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126
BD226 NPN Power Transistors
BD228 NPN Power Transistors
BD227 PNP Power Transistors
BD229 PNP Power Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD16805FV-ME2 功能描述:BUILT-IN THE PHASE ADJUSTMENT CO 制造商:rohm semiconductor 系列:* 包裝:剪切帶(CT) 零件狀態(tài):在售 安裝類型:表面貼裝 封裝/外殼:40-SSOP(0.213",5.40mm 寬) 供應(yīng)商器件封裝:40-SSOPB 標(biāo)準(zhǔn)包裝:1
BD169 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILIZIUM-NPN-EPITAXIAL-PLANAR-LEISTUNGSTRANSISTOREN SILICON NPN EPITAXIAL PLANAR POWRE TRANSISTORS
BD16922EFV-ME2 功能描述:AUTOMOTIVE 2CH 60V MAX, H-BRIDGE 制造商:rohm semiconductor 系列:* 包裝:剪切帶(CT) 零件狀態(tài):在售 安裝類型:表面貼裝 封裝/外殼:24-VSSOP(0.220",5.60mm 寬)裸露焊盤 供應(yīng)商器件封裝:24-HTSSOP-B 標(biāo)準(zhǔn)包裝:1
BD16952EFV-ME2 功能描述:2CH HALF-BRIDGE GATE DRIVER 制造商:rohm semiconductor 系列:* 包裝:剪切帶(CT) 零件狀態(tài):在售 安裝類型:表面貼裝 封裝/外殼:24-VSSOP(0.220",5.60mm 寬)裸露焊盤 供應(yīng)商器件封裝:24-HTSSOP-B 標(biāo)準(zhǔn)包裝:1
BD170 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126