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參數(shù)資料
| 型號： | BCX55-6 |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | SOT-89 |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 1A條一（c）|采用SOT - 89 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | BCX55-6 |
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
%
PARTMARKING DETAILS:-
BCX54 – BA
BCX55 – BE
BCX56 – BH
BCX54-10 – BC
BCX55-10 – BG
BCX56-10 – BK
BCX54-16 – BD
BCX55-16 – BM
BCX56-16 – BL
COMPLEMENTARY TYPES:-
BCX54 – BCX51 BCX55 – BCX52 BCX56 – BCX53
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX54
BCX55
BCX56
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
45
60
100
V
Collector-Emitter Voltage
45
60
80
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
1
W
-65 to +150
°C
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
BCX54
BCX55
BCX56
V
(BR)CBO
45
60
100
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
BCX54
BCX55
BCX56
V
(BR)CEO
45
60
80
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CBO
5
V
I
E
=10
μ
A
V
CB
=30V
V
CB
=30V, T
amb
=150°C
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=5mA, V
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
MHz I
=50mA, V
CE
=10V,
f=100MHz
Collector Cut-Off Current
0.1
20
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
20
nA
Collector-Emitter Saturation Voltage V
CE(sat)
Base-Emitter Turn-On Voltage
0.5
V
V
BE(on)
h
FE
1.0
V
Static Forward Current Transfer
Ratio
–10
–16
25
40
25
63
100
250
160
250
Transition Frequency
f
T
150
Output Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
C
obo
15
pF
V
CB
=10V, f=1MHz
BCX54
BCX55
BCX56
C
C
B
E
3 - 35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCX5416 | Obsolete - alternative part: BCX5616 |
| BCX54-6 | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SOT-89 |
| BCX5610 | Obsolete - alternative part: BCX5616 |
| BCX56-6 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SOT-89 |
| BCX54 | SURFACE MOUNT NPN SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCX55-BE | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
| BCX55E6327 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| BCX55E6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 60V 1A 4-Pin(3+Tab) SOT-89 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR NPN AF 60V SOT-89 |
| BCX55E6327T | 制造商:Infineon Technologies AG 功能描述:AF TRANS SOT89 T&R 1K |
| BCX55H6327XTSA1 | 功能描述:TRANSISTOR NPN SOT89 制造商:infineon technologies 系列:汽車級，AEC-Q101 包裝:帶卷（TR） 零件狀態(tài):最後搶購 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 50mA，500mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:40 @ 150mA，2V 功率 - 最大值:2W 頻率 - 躍遷:100MHz 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應(yīng)商器件封裝:PG-SOT89 標準包裝:1,000 |
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