參數(shù)資料
型號(hào)： BCW68H
廠商： ZETEX PLC
元件分類： 小信號(hào)晶體管
英文描述： PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
中文描述： 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-23, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 82K
代理商： BCW68H
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–45
Vdc
Collector–Base Voltage
–60
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–800
mAdc
DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = –10
μ
Adc, VEB = 0)
Emitter–Base Breakdown Voltage (IE = –10
μ
Adc, IC = 0)
Collector Cutoff Current
(VCE= –45 Vdc, IE = 0)
(VCE= –45 Vdc, IB = 0, TA = 150
°
C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
–45
—
—
Vdc
–60
—
—
Vdc
–5.0
—
—
Vdc
—
—
—
—
–20
–10
nAdc
μ
Adc
Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0)
IEBO
—
—
–20
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW68GLT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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