參數(shù)資料
型號: BCW61BL
英文描述: TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | SOT-23
中文描述: 晶體管|晶體管|進步黨| 32V的五(巴西)總裁| 200mA的一(c)| SOT - 23封裝
文件頁數(shù): 1/2頁
文件大小: 97K
代理商: BCW61BL
相關PDF資料
PDF描述
BCW61BR TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-236
BCW61DR Fuse Holder; Mounting Type:In-Line; Body Material:Thermoset; Current Rating:20A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Wire Size (AWG):14; Number of Fuses:1; Voltage Rating:32V
BCW61RB DIODE TVS 10V 1.5KW UNI-DIR
BCW61RD TVS Diode; Leaded Process Compatible:Yes RoHS Compliant: Yes
BCW61SERIES TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:171V; Breakdown Voltage, Vbr:190V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:5.5A RoHS Compliant: Yes
相關代理商/技術參數(shù)
參數(shù)描述
BCW61BLR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
BCW61BLT1 制造商:Rochester Electronics LLC 功能描述:- Bulk
bcw61blt3 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述:
BCW61BMTF 功能描述:兩極晶體管 - BJT SOT-23 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BCW61BR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-236